Group III-nitride based hetero and quantum structuresMONEMAR, B; POZINA, G.Progress in quantum electronics. 2000, Vol 24, Num 6, pp 239-290, issn 0079-6727Article

Optical characterization of InGaN/GaN MQW structures without in phase separationMONEMAR, B; PASKOV, P. P; POZINA, G et al.Physica status solidi. B. Basic research. 2001, Vol 228, Num 1, pp 157-160, issn 0370-1972Conference Paper

1.54 μm light emission from Er/O and Er/F doped Si p-i-n diodes grown by molecular beam epitaxyNI, W.-X; DU, C.-X; JOELSSON, K. B et al.Journal of luminescence. 1998, Vol 80, Num 1-4, pp 309-314, issn 0022-2313Conference Paper

Growth of strained Si/Si_1-yC_y/Si_1-xGe_x structures by MBEJOELSSON, K. B; NI, W.-X; POZINA, G et al.Vacuum. 1998, Vol 49, Num 3, pp 185-188, issn 0042-207XConference Paper

Heteroepitaxial Indium Phosphide on SiliconJUNESAND, C; METAFERIA, W; OLSSON, F et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7719, issn 0277-786X, isbn 0-8194-8192-0 978-0-8194-8192-4, 1Vol, 77190Q.1-77190Q.9Conference Paper

Growth and characterization of thick GaN layers grown by halide vapour phase epitaxy on lattice-matched AlInN templatesHEMMINGSSON, C; BOOTA, M; RAHMATALLA, R. O et al.Journal of crystal growth. 2009, Vol 311, Num 2, pp 292-297, issn 0022-0248, 6 p.Article

Hydride vapour phase epitaxy growth and characterization of thick GaN using a vertical HVPE reactorHEMMINGSSON, C; PASKOV, P. P; POZINA, G et al.Journal of crystal growth. 2007, Vol 300, Num 1, pp 32-36, issn 0022-0248, 5 p.Conference Paper

Time resolved photoluminescence study of Si modulation doped GaN/Al_0.07Ga_0.93N multiple quantum wellsHARATIZADEH, H; MONEMAR, B; PASKOV, P. P et al.Physica status solidi. B. Basic research. 2004, Vol 241, Num 5, pp 1124-1133, issn 0370-1972, 10 p.Article

Optical investigation of CdSe/ZnSe quantum nanostructuresVALAKH, M. Ya; IVANOV, S. V; MESTRES, N et al.Semiconductor science and technology. 2002, Vol 17, Num 2, pp 173-177, issn 0268-1242Article

Photoluminescence of excitons in In_xGa_1-xN/In_yGa_1-yN multiple quantum wellsMONEMAR, B; PASKOV, P. P; BERGMAN, J. P et al.Physica status solidi. A. Applied research. 2002, Vol 190, Num 1, pp 161-166, issn 0031-8965Conference Paper

Time-resolved optical properties of GaN grown by metalorganic vapor phase epitaxy with indium surfactantPOZINA, G; BERGMAN, J. P; MONEMAR, B et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2001, Vol 82, Num 1-3, pp 137-139, issn 0921-5107Article

Phase transformation in K-and γ-Al₂O₃ coatings on cutting tool insertsTRINH, D. H; BACK, K; POZINA, G et al.Surface & coatings technology. 2009, Vol 203, Num 12, pp 1682-1688, issn 0257-8972, 7 p.Article

Modeling, optimization, and growth of GaN in a vertical halide vapor-phase epitaxy bulk reactorHEMMINGSSON, C; POZINA, G; HEUKEN, M et al.Journal of crystal growth. 2008, Vol 310, Num 5, pp 906-910, issn 0022-0248, 5 p.Conference Paper

Optical investigation of AlGaN/GaN quantum wells and superlatticesMONEMAR, B; PASKOV, P. P; KAMIYAMA, S et al.Physica status solidi. A. Applied research. 2004, Vol 201, Num 10, pp 2251-2258, issn 0031-8965, 8 p.Conference Paper

Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum well structuresMONEMAR, B; HARATIZADEH, H; PASKOV, P. P et al.Physica status solidi. B. Basic research. 2003, Vol 237, Num 1, pp 353-364, issn 0370-1972, 12 p.Article

Optical study of AlGaN/GaN multiple quantum well structures grown on laterally overgrown GaN templatesPOZINA, G; BERGMAN, J. P; MONEMAR, B et al.Physica status solidi. A. Applied research. 2002, Vol 190, Num 1, pp 107-111, issn 0031-8965Conference Paper

Optimization of growth conditions for strained Si/Si_1-yC_y structuresJOELSSON, K. B; NI, W.-X; POZINA, G et al.Thin solid films. 1998, Vol 321, Num 1-2, pp 15-20, issn 0040-6090Conference Paper

Metastability of the UV luminescence in Mg-doped GaN layers grown by MOVPE on quasi-bulk GaN templatesPOZINA, G; MONEMAR, B; USUI, A et al.Physica. B, Condensed matter. 2007, Vol 401-02, pp 302-306, issn 0921-4526, 5 p.Conference Paper

Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structuresMONEMAR, B; PASKOV, P. P; HARATIZADEH, H et al.SPIE proceedings series. 2003, pp 63-67, isbn 0-8194-4824-9, 5 p.Conference Paper

Optical properties of GaNAs/GaAs structuresBUYANOVA, I. A; CHEN, W. M; POZINA, G et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2001, Vol 82, Num 1-3, pp 143-147, issn 0921-5107Article

In-plane and in-depth nonuniformities in defect distribution in GaN and InGaN epilayersGODLEWSKI, M; GOLDYS, E. M; POZINA, G et al.Physica. B, Condensed matter. 2001, Vol 308-10, pp 102-105, issn 0921-4526Conference Paper

The 3.466 eV bound exciton in GaNMONEMAR, B; CHEN, W. M; PASKOV, P. P et al.Physica status solidi. B. Basic research. 2001, Vol 228, Num 2, pp 489-492, issn 0370-1972Conference Paper

Time-resolved photoluminescence in strained GaN layersPOZINA, G; EDWARDS, N. V; BERGMAN, J. P et al.Physica status solidi. A. Applied research. 2001, Vol 183, Num 1, pp 151-155, issn 0031-8965Conference Paper

Luminescence from Si-Si_1-xGe_x/Si_1-yC_y-Si structuresJOELSSON, K. B; POZINA, G; NI, W.-X et al.Journal of luminescence. 1998, Vol 80, Num 1-4, pp 497-501, issn 0022-2313Conference Paper

Incorporation and luminescence properties of Er₂O₃ and ErF₃ doped Si layers grown by molecular beam epitaxyNI, W.-X; JOELSSON, K. B; DU, C.-X et al.Thin solid films. 1998, Vol 321, Num 1-2, pp 223-227, issn 0040-6090Conference Paper